Interface characterization of Al2O3/m-plane GaN structure
نویسندگان
چکیده
منابع مشابه
Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells
In this thesis, we investigate the synthesis of wurtzite M-plane (In,Ga)N(1100) heterostructures on γLiAlO2(100) by plasma-assisted molecular beam epitaxy (MBE). We examine the impact of growth conditions on the structural, morphological, and optical doping properties of M-plane GaN. Furthermore, we fabricate M-plane (In,Ga)N/GaN multiple quantum wells and investigate their structural and optic...
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M-plane GaN avalanche p-i-n photodiodes on low dislocation density freestanding m-plane GaN substrates were realized using metal-organic chemical vapor deposition. High quality homoepitaxial m-plane GaN layers were developed; the root-mean-square surface roughness was less than 1 Å and the full-width-at-half-maximum value of the x-ray rocking curve for 101̄0 diffraction of m-plane GaN epilayer w...
متن کاملGrowth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates
M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [11[Formula: see text]0]. According to high-resolution X-ray di...
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A new approach to human-computer interaction and user interfaces based on the concepts of simple and composite unities, is described. A simple unity can be seen as an attribute-based object. The prototype described here uses a three-dimensional graphical workspace for working with the knowledge planes. A k-plane is a set of semantically grouped unities and constraints on them. K-planes exhibit ...
متن کاملElectronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chemical properties of the H2O/GaN(0001) interface under elevated pressures and/or temperatures. A pristine GaN(0001) surface exhibited upward band bending, which was partially flattened when exposed to H2O at room temperature. However, the GaN surface work function was slightly reduced due to the ad...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2021
ISSN: 2158-3226
DOI: 10.1063/5.0031232